PAD50DFN 8L ROHS

PAD-DFN SERIES MINIATURE/NON MAGNETIC 8-PIN DFN PACKAGE LOW LEAKAGE DIODE FEATURES REVERSE BREAKDOWN VOLTAGE BVR ≥ -30V REVERSE CAPACITANCE Crss ≤ 2.0pF DFN SERIES TOP VIEW C C 8 7 6 5 ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature -55 to +150 °C Operating Junction Temperature -55 to +150 °C PADF YYWW Maximum Power Dissipation2 Continuous Power Dissipation 300mW Maximum Currents Forward Current 10mA 1 2 3 A 4 LEADS 1, 2, 4, 5 & 7 – NO CONNECTION COMMON ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) SYMBOL BVR CHARACTERISTIC MIN Reverse Breakdown Voltage -30 TYP VF Forward Voltage 0.8 Crss Total Reverse Capacitance 1.5 MAX UNITS 1.5 V pF CONDITIONS IR = -1µA IF = 5mA VR = -5V, f = 1MHz SPECIFIC ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) SYMBOL IR CHARACTERISTIC TYP Maximum Reverse Leakage Current Linear Integrated Systems • PAD5DFN -5 PAD50DFN -50 UNITS pA CONDITIONS VR = -20V 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201182 07/25/2019 Rev#A10 ECN# PADDFN SERIES Figure 1. Operational Amplifier Protection Input Differential Voltage limited to 0.8V (typ) by DFNs D1 and D2. Common Mode Input voltage limited by DFNs D3 and D4 to ±15V. Figure 2. Sample and Hold Circuit Typical Sample and Hold circuit with clipping. DFN diodes reduce offset voltages fed capacitively from the JFET switch gate. FIGURE 2 FIGURE 1 +V PAD5DFN JPAD5 D1 JPAD20 PAD5DFN D1 D2 +V -V D2 OP-27 2N4117A 4117DFN + D3 D4 ein 2N4393 4391DFN CONTROL SIGNAL C +15V -15V VOUT R DFN PACKAGE TOP VIEW BOTTOM VIEW SOLDER PAD PITCH & DIMENSIONS EXPOSED PAD 1.80±0.05 (2 SIDES) 1.60±0.15 5 PACKAGE OUTLINE 8 0.20 MIN 2.0±0.10 (4 SIDES) CHAMFERED CORNER FOR PIN 1 INDICATOR 0.25X0.25 0.90±0.15 0.20 MIN. SIDE VIEW 4 0.76±0.05 0.29±0.10 (8x) 0.50 (6x) TYP. 1 0.25±0.05 (8x) 2.50±0.05 1.05±0.10 (2 SIDES) 0.20 MIN 0.42±0.05 (8X) 0.675±0.05 0.50 (4x) TYP. ALL DIMENSIONS IN MILLIMETERS 0.30 (4x) TYP. 0.25±0.05 (8X) NOTES 1. 2. 3. Absolute maximum ratings are limiting values above which serviceability may be impaired. Derate 2.8 mW/ºC above 25ºC The PAD type number denotes its maximum reverse current value in pico amperes. Devices with IR values intermediate to those shown are available upon request. Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Linear Integrated Systems develops and produces the highest performance semiconductors of their kind in the industry. Linear Systems, founded in 1987, uses patented and proprietary processes and designs to create its high performance discrete semiconductors. Expertise brought to the company is based on processes and products developed at Amelco, Union Carbide, Intersil and Micro Power Systems by company founder John H. Hall. Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201182 07/25/2019 Rev#A10 ECN# PADDFN SERIES